ElectroHolography Laboratory samples

samples:a1

2015-07-21T13:06:34-06:00

A1 Past: Used Al mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 10min, annealed 45min. Written, evaporated, lifted off. Success! Metricon Two modes in red. System Analyzer All transducers were impedance matched using 27 nH. After Impedance matching

samples:a2

2015-07-21T12:20:28-06:00

A2 Past: Used Al mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 10min, annealed 45min. Current: written, evaporated, lifted off with partial success. Cleaned completely. Future: prep for writing in ESEM.

samples:a3

2015-07-15T14:36:38-06:00

A3 Past: Used Al mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 10min, annealed 45min. Current: prepped with LOR and pmma for writing. Future: Use ESEM to write 18 channel device ---------- Sample fabricated by Jacob Kimball

samples:a4

2015-07-15T14:36:38-06:00

A4 Past: Used Al mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 10min, annealed 45min. Writing History: The sample was written at 30KeV spot 4/6 At first I was writing big features with high actual current but low programmed current, I changed this mid way. offset from corner: 5000, -800 (this wasn't far enough down

samples:a5

2015-07-21T13:07:27-06:00

A5 Past: Used Al mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 10min, annealed 45min. Current: Written, evaporated, lifted off. Success! Metricon: System Analyzer Preliminary testing on six transducers. (T1, T4, T6, T11, T15, T18) Non-uniform order due to limited space on certain transducer bonding pads. 27 nH used with each transducer.

samples:a6

2015-07-21T12:20:28-06:00

A6 Past: Used SiO2 mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 10min, annealed 45min. Current: prepped with LOR and pmma for writing. Developed, evaporated. Liftoff failed. Future: cleaned and prepped again.

samples:a7

2015-07-21T13:08:25-06:00

A7 Past: Used SiO2 mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 10min, annealed 45min. Current: prepped with LOR and pmma for writing. Written, evaporated, lifted off. Success! Polished at 90 degree angle. Transducer numbers are given, starting from the left going clockwise to the right, from 1 to 18. Every third transducer wire-bonded to a preliminary testing board with 6 connectors.

samples:a8

2015-07-21T12:20:30-06:00

A8 Past: Used SiO2 mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 10min, annealed 45min. Current: prepped with LOR and pmma for writing. Developed, evaporated, liftoff failed. Future: clean and prep for writing in ESEM.

samples:a9

2015-07-21T13:09:13-06:00

A9 Past: Used SiO2 mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 10min, annealed 45min. Current: prepped with LOR and pmma for writing. Written, evaporated, lifted off. Success! This device showed only one mode on the Metricon. We will try re-annealing the device for 20 minutes to see if we can create a second mode.

samples:a10

2015-07-21T13:09:47-06:00

A10 Past: Used SiO2 mask to create channels and 1.4mm non-proton exchanged region. Proton exchanged 10min, annealed 45min. Current: prepped with LOR and pmma for writing. Written, evaporated, lifted off. Success! (There is overlap between transducers and waveguide)

samples:a11

2015-07-21T13:10:28-06:00

A11 Past: Used SiO2 mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 10min, annealed 45min. HF etch 2 minutes to remove mask. Red Green Blue Comparison results Current: prepped with LOR and pmma for writing.

samples:a12

2015-07-21T13:10:46-06:00

A12 Past: Used SiO2 mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 11min, annealed 45min. HF etch 2 minutes to remove mask. Only have the Green video right now. Current: prepped with LOR and pmma for writing.

samples:a13

2015-07-21T13:11:06-06:00

A13 Past: Used SiO2 mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 12min, annealed 45min. HF etch 2 minutes to remove mask. Red Green Blue Comparison results Current: prepped with LOR and pmma for writing.

samples:a14

2015-07-21T13:11:29-06:00

A14 Past: Used SiO2 mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 13min, annealed 45min. HF etch 2 minutes to remove mask. Red Green Blue Comparison results Current: prepped with LOR and pmma for writing.

samples:a15

2015-07-21T13:11:52-06:00

A15 Past: Used SiO2 mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 14min, annealed 45min. HF etch 2 minutes to remove mask. Red Green Blue Comparison results Current: prepped with LOR and pmma for writing.

samples:a16

2015-07-21T13:12:20-06:00

A16 Past: Used SiO2 mask to create channels and 2.4mm non-proton exchanged region. Proton exchanged 15min, annealed 45min. HF etch 2 minutes to remove mask. Red Green Blue Comparison results Current: prepped with LOR and pmma for writing.

samples:c1

2015-07-15T14:36:48-06:00

C1 Past: C1 is thick X-cut and has been proton exchanged and annealed (10 min, 45 min). It was prepped with PMMA and Aquasave for ESEM patterning of an 18 channel device and then developed. Evaporated 10nm Titanium as an adhesive layer and then 200nm Aluminum, went through liftoff.

samples:c2

2015-07-21T13:12:49-06:00

C2 Past: C2 is thick X-cut and has been proton exchanged and annealed (10 min, 45 min). Prepped with LOR (190 degrees C, 60 min bake). It was then prepped with PMMA and Aquasave for ESEM patterning of an 18 channel device and then developed. Development with LOR only partially successful, leaving 7 usable transducers.

samples:d1

2015-07-21T13:14:20-06:00

D1 sign low f medium f high f Past: D1 is X-cut and has not been proton exchanged or annealed. It was prepped with PMMA and Aquasave for ESEM patterning of long transducers and then developed. Evaporated 10nm Nickel as an adhesive layer and then 200nm Aluminum, went through liftoff.

samples:d2

2015-07-15T14:36:45-06:00

D2 Past: D2 is X-cut and has not been proton exchanged or annealed. It was prepped with PMMA and Aquasave for ESEM patterning of long transducers and then developed. Evaporated 10nm Nickel as an adhesive layer and then 200nm Aluminum, went through liftoff.

samples:d3

2015-07-21T13:15:07-06:00

D3 sign low f med f high f Past: D3 is X-cut and has not been proton exchanged or annealed. It was prepped with PMMA and Aquasave for ESEM patterning of long transducers and then developed. Evaporated 10nm Titanium as an adhesive layer and then 200nm Aluminum, went through liftoff.

samples:d4

2015-07-21T12:46:50-06:00

D4 sign low f med f high f Past: There is no know history of D4. Current: The wire bounder does not want to wire bond to this sample. The pads do not appear to be metalic. Future: Cleaned in Al etch and nanostrip, prepped again for ESEM.

samples:d5

2015-07-21T13:15:44-06:00

D5 Transducers 1-5 Transducers 6-10 Transducers 11-12 Past: There is no know history of D5. Current: I can find no functioning transducer on this sample. Future: Cleaned in Al etch and nanostrip, prepped again for ESEM. ---------- Sample fabricated by Unknown

samples:d6

2015-07-21T13:17:10-06:00

D6 Sign Low F Mid F High F Past: There is no known history of D6. Current: This sample is wire bonded and ready to test. Future: Cleaned in Al etch and nanostrip, prepped again for ESEM. ---------- Sample fabricated by Unknown page updated 12 May 2015

samples:d7

2015-07-21T13:19:06-06:00

D7 Past: D7 was proton exchanged for 10 minutes and annealed for 45 minutes. Prepped with pmma and aqua save for ESEM. Written in ESEM at Spot 5 for long transducers, developed for 1 minute. Evaporated 200nm Aluminum, placed in NMP for liftoff.

samples:d8

2015-07-21T13:20:35-06:00

D8 Past: D8 was proton exchanged for 10 minutes and annealed for 45 minutes. Prepped with pmma and aqua save for ESEM. Written in ESEM at Spot 5 for long transducers, developed for 1 minute. Evaporated 200nm Aluminum, placed in NMP for liftoff.

samples:d9

2015-07-21T13:21:46-06:00

D9 Past: D9 was proton exchanged for 10 minutes and annealed for 45 minutes. Prepped with pmma and aqua save for ESEM. Written in ESEM at Spot 5 for long transducers, developed for 1 minute. Evaporated 200nm Aluminum, placed in NMP for liftoff.

samples:d_wafer

2015-08-03T08:09:48-06:00

D_Wafer This is the lithium niobate wafer the allows testing of 91MHz designed tandsducers that are narrow and wide, long and short. Test 1 - Angle Dependence This test was done using the smallest 91MHz trandsucer in the bottom right corner. The yellow light was found to have minimal impact and so was left on. The red laser was used at 6V with a 28dBm signal coming from the amplifier (11.8 V to the amp). 94MHz was found to produce the maximum light deflection and 85MHz produced none.

samples:eδ

2015-07-21T13:29:18-06:00

EΔ Microscope [ETri_T1] [ETri_T2] [ETri_T3] Resitances 1-2: 1.22kΩ 3-4: 0.53kΩ 5-6: 2.04kΩ 5-7: 1.96kΩ 5-8: 1.68kΩ 6-7: 1.44kΩ 6-8: 1.29kΩ 7-8: 1.20kΩ This sample is chipped and broke the prism I tried to test with. I will not test it more.

samples:eχ

2015-07-21T13:29:33-06:00

Eχ [EX_T1] [EX_T2] [EX_T3] Resitances 1-2: 0.15kΩ 1-11: 0.21kΩ 1-12: 0.18kΩ 2-11: 0.24kΩ 2-12: 0.22kΩ 11-12: 0.13kΩ 3-4: 0.55kΩ 3-9: 0.99kΩ 3-10: 5.0kΩ 4-9: 0.61kΩ 4-10: 3.83kΩ 9-10: 3.67kΩ 5-6: 2.45kΩ 5-7: 1.19kΩ 5-8: 1.38kΩ 6-7: 0.79kΩ

samples:e□

2015-07-15T14:36:20-06:00

E□ Resitances 3-4: 0.40kΩ 5-6: 0.13kΩ 7-8: 0.21kΩ 9-10: 2.21kΩ This sample was knocked off the table and broke. No testing is possible.

samples:e1

2015-07-15T14:36:21-06:00

E1 Past: 200nm Aluminum was deposited. Aqua-Safe layer was deposited. Written in the Helios. 100nm Chrome resistive strip was deposited. Wire bonded and handed off to Scott for testing. When 1V was applied across the leads the device passed 1A of current and a thin film on top turned brown. Aqua-Safe was a bad idea for this device.

samples:e2

2015-07-15T14:36:18-06:00

E2 Past: 200nm Aluminum was deposited. 10nm of Chrome deposited. Written in the Helios. Chrome removed after writting with Chrome etch. 100nm Chrome resistive strip was deposited. Wire bonded and handed off to Scott for testing. No detectable light manipuation. However the resistive strip was damaged during testing and needs to be redone.

samples:e4

2015-07-21T13:30:01-06:00

E4 Microscope Images [E4_T1] [E4_T2] [E4_T3] Layout 1■____■7 2■¯¯¯¯■8 3■____■9 4■¯¯¯¯■10 5■____■11 6■¯¯¯¯■12 Resistance 3-4 11.4kΩ 9-10: 4.3kΩ Output

samples:e5

2015-07-21T13:30:24-06:00

E5 Past: 200nm Aluminum was deposited. 10nm of Chrome deposited. Written in the Helios. Chrome removed after writting with Chrome etch. 100nm Chrome resistive strip was deposited. Wire bonded and handed off to Scott for testing. The Helios cleaning cut is showing a refation pattern and therefore is working. However the resistive strips show infinate resistance suggesting damage. Increasing the thickness of the resistive strip may solve the problem. The devices are pictured below:

samples:e7

2015-07-21T13:31:25-06:00

E7 Past: 200nm Aluminum was deposited. 10nm of Chrome deposited. Written in the Helios. Chrome removed after writting with Chrome etch. 100nm Chrome resistive strip was deposited. Wire bonded and handed off to Scott for testing. The Helios cleaning cut is showing a refraction pattern and therefore is working. However the resistive strips show infinite resistance suggesting damage. The devices are pictured below:

samples:e10

2015-08-05T09:51:55-06:00

E10 Past: X-cut. NOT PROTON EXCHANGED. Written with new EO device without a resistor bridge. 3mm wide at spot 30. Only lifted off in center. Cleaned completely. RB E10 Current: Two samples exist with this number one is a Resistor Bridge EO with 200nm of Chrome.

samples:e11

2015-08-03T10:19:06-06:00

E11 Past: X-cut. NOT PROTON EXCHANGED. RB E11 Past: Two samples exist with this number, one is a Resistor Bridge EO with 200nm of Chrome. It looks like the following: Before Bake After Bake @ 375°C for 30 min [E11_T1] [E11_T1_Ab] [E11_T2] [E11_T2_AB] [E11_T3] [E11_T3_AB] Layout

samples:e12

2015-08-03T10:18:35-06:00

E12 Past: X-cut. NOT PROTON EXCHANGED. RB E12 Past: Two samples exist with this number, one is a Resistor Bridge EO with 200nm of Chrome. It looks like the following: Before Bake After Bake @ 375°C for 30 min [E12_T1] [E12_T1_Ab] [E12_T2] [E12_T2_AB] [E12_T3] [E12_T3_AB] Layout

samples:e13

2015-07-21T13:51:30-06:00

E13 Past: X-cut. NOT PROTON EXCHANGED. RB E13 Current: Two samples exist with this number, one is a Resistor Bridge EO with 200nm of Chrome. It looks like the following: [E13_T1] [E13_T2] [E13_T3] Layout 1■____■7 2■¯¯¯¯■8 3■____■9 4■¯¯¯¯■10

samples:e14

2015-07-15T14:36:23-06:00

E14 Past: X-cut. NOT PROTON EXCHANGED. Current: Future:

samples:e15

2015-07-23T11:22:10-06:00

E15 Past: X-cut. NOT PROTON EXCHANGED. Resistor Bridge is 200nm of Chrome. Current: It looks like the following: [E15_T1] [E15_T2] [E15_T3] Layout 6■____■7 5■¯¯¯¯■8 4■____■9 3■¯¯¯¯■10 2■____■11 1■¯¯¯¯■12 RB EO Resistance

samples:e16

2015-07-21T13:55:14-06:00

E16 Past: X-cut. NOT PROTON EXCHANGED. Current: It looks like the following: [E16_T1] [E16_T2] [E16_T3] Layout 1■____■7 2■¯¯¯¯■8 3■____■9 4■¯¯¯¯■10 5■____■11 6■¯¯¯¯■12 EO Resistance 1-2: 17.6Ω 3-4: 56.3Ω 5-6: 5.9Ω 7-8: 5.8Ω

samples:e17

2015-07-21T13:33:03-06:00

E17 Past: X-cut. Resistor Bridge with 200nm of Chrome. Current: The Device looks like the following: [E17_T1] [E17_T2] [E17_T3] Layout 6■____■7 5■¯¯¯¯■8 4■____■9 3■¯¯¯¯■10 2■____■11 1■¯¯¯¯■12 Resistance 1-11: 32.5kΩ 1-12: 67.0kΩ

samples:e18

2015-08-05T09:50:39-06:00

E18 Past: X-cut. NOT PROTON EXCHANGED. It looks like the following: [E18_T1] [E18_T2] [E18_T3] Layout 1■____■7 2■¯¯¯¯■8 3■____■9 4■¯¯¯¯■10 5■____■11 6■¯¯¯¯■12 RB EO Resistance 1-2: 8.4Ω 3-4: 15.5Ω 5-6: 5.9Ω 11-12: 5.7Ω

samples:e19

2015-07-28T14:58:21-06:00

E19 Past: X-cut. Resistor Bridge with 50nm of Nickel. Current: The Device looks like the following: Before Bake After Bake @ 375°C for 30 min [E19_T1] [E19_T1_Ab] [E19_T2] [E19_T2_AB] [E19_T3] [E19_T3_AB] Layout Before Bake After Bake @ 375°C for 30 min 1■____■7

samples:e20

2015-07-21T12:46:48-06:00

E20 Past: X-cut. Resistor Bridge with 50nm of Nickel. Current: The Device looks like the following: [E20_T1] [E20_T2] [E20_T3] Layout 1■____■7 2■¯¯¯¯■8 3■____■9 4■¯¯¯¯■10 5■____■11 6■¯¯¯¯■12 Resistance 3-4: 780kΩ 9-10: 480Ω

samples:e21

2015-08-05T10:00:18-06:00

E21 Past: X-cut. Resistor Bridge with 50nm of Nickel. The Device looks like the following: Before Bake After Bake @ 375°C for 30 min [E21_T1] [E21_T1_Ab] [E21_T2] [E21_T2_AB] [E21_T3] [E21_T3_AB] Layout Before Bake After Bake @ 375°C for 30 min 1■____■7 2■¯¯¯¯■8

samples:e22

2015-07-28T11:17:59-06:00

E22 Past: X-cut. Resistor Bridge with 50nm of Nichrome. Current: The Device looks like the following: Before Bake After Bake @ 375°C for 30 min [E22_T1] [E22_T1_Ab] [E22_T2] [E22_T2_AB] [E22_T3] [E22_T3_AB] Layout Before Bake After Bake @ 375°C for 30 min 6■____■7

samples:e23

2015-07-28T11:14:40-06:00

E23 Past: X-cut. Resistor Bridge with 50nm of Nichrome. Current: The Device looks like the following: Before Bake After Bake @ 375°C for 30 min [E23_T1] [E23_T1_Ab] [E23_T2] [E23_T2_AB] [E23_T3] [E23_T3_AB] Layout Before Bake After Bake @ 375°C for 30 min 12■____■1

samples:e24

2015-07-27T08:38:49-06:00

E24 Past: X-cut. Resistor Bridge with 200nm of Nichrome. Current: The Device looks like the following: [E24_T1] [E24_T2] [E24_T3] Layout 6■____■7 5■¯¯¯¯■8 4■____■9 3■¯¯¯¯■10 2■____■11 1■¯¯¯¯■12 Resistance 7-8: 402Ω 9-10: 230Ω

samples:e25

2015-07-27T12:57:23-06:00

E25 Past: X-cut. Resistor Bridge with 200nm of Nichrome. Current: The Device looks like the following: [E25_T1] [E25_T2] [E25_T3] Note: 1-4 were all connected by a resistor strip. The same was true of 9-12. Using a metal tip the excess connections were scratched away.

samples:e26

2015-07-28T10:34:06-06:00

E26 Past: X-cut. Resistor Bridge with 200nm of Nichrome as shown by the E-Beam evaporator, 400nm by normal measurement. Current: The Device looks like the following: [E26_T1] [E26_T2] [E26_T3] Layout 6■____■7 5■¯¯¯¯■8 4■____■9 3■¯¯¯¯■10

samples:e27

2015-07-28T10:34:26-06:00

E27 Past: X-cut. Resistor Bridge with 200nm of Nichrome as shown by the E-Beam evaporator, 400nm by normal measurement. Current: The Device looks like the following: [E27_T1] [E27_T2] [E27_T3] Layout 6■____■7 5■¯¯¯¯■8 4■____■9 3■¯¯¯¯■10

samples:e28

2015-07-28T17:11:37-06:00

E28 Past: X-cut. Resistor Bridge with 200nm of Nichrome as shown by the E-Beam evaporator, 400nm by normal measurement. Current: The Device looks like the following: [E28_T1] [E28_T2] [E28_T3] Layout 6■____■7 5■¯¯¯¯■8 4■____■9 3■¯¯¯¯■10

samples:f1

2015-10-13T16:11:33-06:00

F1 The following circuit was used in testing these devices: This is the first EO device that uses variable path lengths instead of Resistor Bridges. I will call these VPL EO devices. It has 200nm Al that was patterned with a design by Christopher. It was then Proton Exchanged with the new proton exchange parameters 15min with a 45min Anneal at 375°C. Then 200nm Aluminum was used to create the connection strips.

samples:f2

2015-10-22T09:35:37-06:00

F2 It has 200nm Al that was patterned with a design by Christopher. It was then Proton Exchanged with the new proton exchange parameters 15min with a 45min Anneal at 375°C. Then 200nm Aluminum was used to create the connection strips.

samples:h1

2015-12-01T13:05:53-06:00

H1 This is the first grating image device. It is a three mask process over 200nm of deposited Al. After mask one the resist looked like this: [Sign] [Grating Image] [Grating Image Closeup]

samples:l1

2015-07-15T14:36:30-06:00

L1 got 10min PE/ 45 anneal Took off the nitride before anneal

samples:l2

2015-07-15T14:36:30-06:00

L1 got 10min PE/ 45 anneal

samples:l3

2015-09-01T16:17:55-06:00

Took off 30 seconds of Nitride. PE for 10 mins and Anneal for 45. Took off the rest of the Nitride for 1 min 15 secs. Wire-bonded three transducers from each modulator on to a single breakout board. The Aluminum pads connecting each transducer seem almost translucent, almost transparent. This is probably due either to being too close to the edge during the polishing process, or because the etching process was too long. L4, which was prepared at the same time did not have this wearing dow…

samples:l4

2015-09-01T16:17:34-06:00

Took off 30 seconds of Nitride. PE for 10 mins and Anneal for 45. Took off the rest of the Nitride for 1 min 15 secs. Modulator 1 is on the left and Transducers are labeled 1-18 starting from left to right. UMCC channels on the breakout board are labeled 1-20 from left to right.

samples:l5

2015-09-04T15:57:04-06:00

L5 L5 is an 18 channel modulator on x-cut Lithium Niobate, with nitride covering it. I will etch it, Proton Exchange and Anneal it, and then etch it more in an attempt to create a recipe for working 18 Channel Modulator we can mass produce. Pictures will be taken at each step to document the process.

samples:l6

2015-09-10T11:49:47-06:00

L6 L6 is lithographic 18 channel modulator covered in Nitride. It was etched for 25 secs in the Anelva RIE.

samples:l7

2015-11-09T09:22:15-06:00

L7 The first write came out inverted: After trying many writes and rewrites just to get the waveguide to come out, we were able to etch the waveguides, PE and anneal and then discovered that there was not enough Al at the top to write transducers. That the transducers were unable to line up required us to go back and rewrite new files which lead to the L8 series.

samples:l8.1

2015-11-09T09:23:40-06:00

L8 Sample created on Nov 6, 2015 Heidelberg Recipe Waveguide HMDS + 1:1 dilute s1805 3000 for 54s 6000 for 6s. Soft Bake 15 min at 100 C. As noted by the picture there is extensize Al damage. Visibly different from L8.2 and L8.3 by noticing a large chunk of Al missing from the right side column that runs the length of the sample.

samples:l8.2

2015-11-13T10:21:52-06:00

L8.2 Sample created on Nov 6, 2015 Heidelberg Recipe Waveguide HMDS + 1:1 dilute s1805 3000 for 54s 6000 for 6s. Soft Bake 15 min at 100 C. As noted by the picture there is extensive Al damage. PE 15 min anneal 45. Here are the transducers. Many of the busses are damaged but at least one appears intact.

samples:new_d_wafer_chris

2015-10-02T10:32:00-06:00

New D Wafer (Made by Christopher) Orientation This wafer was not cut therefore the two flat sides provide all orientation clues. For the purposes of this page the correct orientation is with the large flat side to the right and the small flat side to the bottom left. The transducers in each group increase in frequency as they move down the device. When the gap is reached the transducers return to the original size and then decrease again.

samples:t1

2015-07-21T13:22:21-06:00

T1 EO Waveguide Test Strip (Uncracked) Interestingly the aluminum disrupted the waveguiding nature of the LiNbO3. Look at the two pictures below. In the first you can see the waveguided light all the way accross the sample. In the second the light stops where is hits the Al.

samples:t2

2015-07-21T13:22:35-06:00

T2 EO Waveguide Test Strip (Cracked) On this sample the aluminum does not seem to disrupted the waveguiding nature of the LiNbO3. See the picture below. The strangly shaped glow arround the edges are just the broken edges of the device. This sample coupled light in much more easily than the last sample. I believe it was the double sided tape on the bottom of the sample providing a little room to settle. This should be our standard mounting with this device. In neither of these two samples s…

samples:t5

2015-07-21T13:23:18-06:00

Past: Long Transducers. Y-cut Lithium Niobate. Prepped normally, no proton-exchange. Sign Left Side (T1-T2) Right Side (T3-T4) Only four transducers, two of which are much thicker than normal, and two of regular thickness. The side nearest the transducers (where light comes out) is ground to an angle.

samples:t6

2015-07-21T13:24:02-06:00

T6 Past: Long Transducers. Y-cut Lithium Niobate. Normal prep, no proton-exchange. The outside high F device has some aluminum that was not lifted properly. Unsure whether this is connected and will affect use. The inside high F device looks open midway down the bus.

samples:t8

2015-07-21T13:25:48-06:00

T8 Purpose This sample as two sets of 6 transducers. Each set is comprised of three transducers toward the edge and three transducers away from the edge. One set is pointing away from each other (Set 1), while the other points towards each other (Set 2). These are designed to see the interactions of SAW waves with two transducers in the light path.

samples:t9

2015-07-21T13:24:53-06:00

T9 Purpose This sample as two sets of 6 transducers. Each set is comprised of three transducers toward the edge and three transducers away from the edge. One set is pointing away from each other (Set 1), while the other points towards each other (Set 2). These are designed to see the interactions of SAW waves with two transducers in the light path.

samples:t10

2015-10-13T15:18:40-06:00

T10 This sample is the grating testing sample from a polished edge underneath and looks like this: _____________________ | | | | | ▌▌▌ 1 | | | | | | ▌▌▌ 2 | | | | | | ▌▌▌ 3 | |_|___________________|

samples:t11

2015-10-13T15:55:10-06:00

T11 This sample is the second grating testing sample from a polished edge underneath and looks like this: _____________________ | | | | | ▌▌▌ 1 | | | | | | ▌▌▌ 2 | |_|___________________|

samples:t12

2015-10-27T12:36:45-06:00

T12 This is my first attempt to write gratings on the Heidelberg

samples:t13_g2

2015-11-19T15:00:13-06:00

T13 This sample has the identifier G2 on it, but since there is no G set of samples and it is a part of the grating test samples it has been labeled T13 for electronic purposes. This sample has 3, 500um x 1000um, gratings with a feature size of 1um (2um Period). They were written on the ESEM although future iterations can now come through the Heidelberg. It used a 45nm Al hard mask in the RIE and was processed for about 20 min. Depth is still unknown.

samples:w15

2015-07-21T13:28:19-06:00

W15 Past Unknown Current Tests During testing it was noticed that we got waveguided light at 354 degrees showing on the mounting device. However, it was interesting that this waveguided light stopped of its own accord about a centimeter away from the edge of the chip. This was consistent across the entire height of the sample. Possibly indicating that the waveguide ends there. We were unable to diffract light at any frequency. Prompting a look at this sample in the system analyzer. Wha…