The Fusion Silvertouch Power Mach4 Turbo Customplus Platinum Team 7000 Mega™
Cartridges
Holochip Fabricators
Near Eye Display
Primary Researcher
Unassigned
Traitorous Rebels
1. when preparing small samples, run them for 2-5 seconds at 6000 rpm to get even photoresist at the edges.
2. Negative photoresist creates a hole when exposed. (S1805 noninverted)
3. Positive photoresist creates a mountain when exposed. (S1805 inverted)
4. Create small inversion boxes in your mask pattern to define the exact size you want. A full 10x15mm sample should take 1 hour to write maximum.
==================== ==HIMT KQ (Kamran) (4/6/2016)== ==================== Substrate: Al+lithium niobate --> Whole wafer Adhesion Promotor: HDMS (3000 rpm 8 sec) Resist: S1805 (3000 rpm 30 sec) Bake: 100°C in the oven for 15 min WM I (4mm): Filter: ON Energy: 10 mW 42% (%1 to %34 doesn't work well. It doesn't develop) Develop with new MIF300 for 30sec ==================== ==HIMT KQ (Kamran) (3/30/2016)== ==================== Substrate: Al+lithium niobate Adhesion Promotor: HDMS (3000 rpm 8 sec) Resist: AZ3330 (3 drops 3000 rpm 46 sec+6000 for 6 sec) Bake: 110°C on the hot plate (on a couple of paper towels) for 3 minutes and let it cool down WM I (4mm): Filter: ON Energy: 10 mW 100% Develop with new MIF300 for 30sec ==================== ==HIMT KQ (Kamran) (1/14/2016)== ==================== Substrate: Al+lithium niobate Adhesion Promotor: HDMS (3000 rpm 8 sec) Resist: 1:1 Dilute s1805 (3 drops 3000 rpm 46 sec+6000 for 6 sec) Soft Bake: (100°C in oven for 15min) WM I (4mm): Filter: ON Energy: 10 mW 25% Develop with new MIF300 for 30sec ==================== ==HIMT DS (1/13/2016)== ==================== WM I (4mm): Resist: 1:1 s1805:EBR Filter: ON **Energy: 10 mW 25% (revised 1/26)** Develop with new MIF300 for 30sec ==================== ==1:1 Dilute s1805 DS (12/01/2015)== ==================== SMALL FEATURES Substrate: Al+lithium niobate Adhesion Promotor: HDMS (3000 rpm 1 min) Resist: 1:1 Dilute s1805 (3 drops 3000 rpm 54sec+6000 for 6sec) Soft Bake: (100°C in oven for 15min) WM I (4mm): Filter: ON Energy: 10 mW 20% Develop: (300 MIF 30sec) New developer works best ==================== ==1:1 Dilute s1805 SG (12/01/2015)== ==================== SMALL FEATURES Substrate: Al+lithium niobate Adhesion Promotor: HDMS (3000 rpm 1 min) Resist: 1:1 Dilute s1805 (3 drops 3000 rpm 54sec+6000 for 6sec) Soft Bake: (100°C in oven for 15min) WM I (4mm): Filter: ON Energy: 10 mW 25% Develop: (300 MIF 30sec) New developer works best ====================== Az3330 SG (10/28/2015) ====================== Substrate: LiNbO3 Adhesion Promotor: HDMS (3 drops 3000 rpm 1 min) Resist: AZ 3330 (30 drops 3000 rpm 1 min) Soft Bake: (80°C 15 min in Oven) WM I (4mm): Filter: ON Energy: 10 mW 75% Defoc (optical): 0 Defoc (pneumatic): 10 Develop: (300 MIF 1 min) ==================== ==s1805 DS (10/12/2015)== ==================== SMALL FEATURES Substrate: Al+lithium niobate Adhesion Promotor: HDMS (3000 rpm 1 min) Resist: s1805 (3 drops 3000 rpm 54sec+6000 for 6sec) Soft Bake: (100'c in oven for 15min) WM I (4mm): Filter: ON Energy: 40 mW 96% Develop: (300 MIF 30sec) ==================== ==s1805 DS (09/30/2015)== ==================== LARGE FEATURES Substrate: Al+lithium niobate Adhesion Promotor: HDMS (3000 rpm 1 min) Resist: s1805 (3 drops 3000 rpm 1 min) Soft Bake: (100'c in oven for 15min) WM I (4mm): Filter: ON Energy: 40 mW 96% Develop: (300 MIF 1min) ==================== ==s1805 DS (09/30/2015)== ==================== SMALL FEATURES Substrate: Al+Silicon Adhesion Promotor: HDMS (3000 rpm 1 min) Resist: s1805 (33 drops 3000 rpm 1 min) Soft Bake: (100'c on hotplate for 1min) WM I (4mm): Filter: ON Energy: 5 mW 63% Develop: (300 MIF 30 sec) ==================== ==Az3312 DS (09/09/2015)== ==================== Substrate: Aluminum/lithium niobate Adhesion Promotor: HDMS (3000 rpm 1 min) Resist: AZ 3312 (20 drops 3000 rpm 1 min) Soft Bake: (100°C for 15min in the oven) WM I (4mm): Filter: ON Energy: 20 mW 50% Defoc (optical): 0 Defoc (pneumatic): 10 Develop: (300 MIF 1min) Hard Bake: (100°C for 15min in the oven) Aluminum etch 20seconds ==================== ==Az3330 JK (09/02/2015)== ==================== Substrate: LiNbO3 Adhesion Promotor: HDMS (3000 rpm 1 min) Resist: AZ 3330 (4 drops 3000 rpm 1 min) Soft Bake: (75°C 15 min in Oven) WM I (4mm): Filter: ON Energy: 10 mW 60% Defoc (optical): 0 Defoc (pneumatic): 10 Develop: (300 MIF 30 sec) ==================== ==Az3330 SG (10/28/2015)== ==================== Substrate: LiNbO3 Adhesion Promotor: HDMS (3 drops 3000 rpm 1 min) Resist: AZ 3330 (30 drops 3000 rpm 1 min) Soft Bake: (80°C 15 min in Oven) WM I (4mm): Filter: ON Energy: 10 mW 75% Defoc (optical): 0 Defoc (pneumatic): 10 Develop: (300 MIF 1 min) ==================== ==SU-8-10 JCL (09/08/2015)== ==================== WM I (4mm): Resist: SU-8-10 Filter: ON Energy: 80 mW 100% range 30-80% Defoc (optical): 0 Defoc (pneumatic): 10 Overlap Factor: x4 ==================== ==AZ2020 JCL (09/09/2015)== ==================== WM I (4mm): Resist: AZ 2020 Filter: ON Energy: 90 mW 90% Defoc (optical): 0 Defoc (pneumatic): 10 ==================== ==HIMT KC (08/24/2015)== ==================== WM I (4mm): Develop: AZ400k 1:4 60s Resist: 5300A AZ 1518 Filter: ON Energy: 5 mW 45% Defoc (optical): 0 Defoc (pneumatic): 10 Thick samples 5mW 27% 35 sec developing ==================== ==HIMT SMALLEY (06/01/2016)== ==================== FOR WHOLE WAFERS SHINY ALUMINUM WM I (4mm): resist: 1:1 s1805:ebr new Resist: 5300A AZ 1518 Filter: ON Energy: 10 mW 55% Focus: optical ==================== ==HIMT SMALLEY (06/17/2016)== ==================== FOR WHOLE WAFERS SHINY ALUMINUM Resist: 1:1 s1805:ebr new Filter: ON Energy: 10 mW 85% Focus: optical ==================== ==HIMT SMALLEY (06/17/2016)== ==================== FOR THICK SAMPLES SHINY ALUMINUM Resist: 1:1 s1805:ebr new Filter: ON Energy: 10 mW 16% Focus: optical ==================== ==North Aligner SMALLEY (06/8/2016)== ==================== 365nm 8.7mW/cm^2 405nm 21.9mW/cm^2 darkfield mask 1:1 resist 30sec dev. 70/30 duty cycle ==================== ==Thick sample process SMALLEY (06/9/2016)== ==================== resist 1:1 10mW @ 17% Al etch in water bath at 60deg (120 hotplate) exit bath timer 90sec (70/30 will end up 50/50) ==================== ==Thick sample process SMALLEY (10/10/2016)== ==================== resist 1:1 10mW @ **18%** for 1um Al etch in water bath at 60deg (120 hotplate) exit bath ==================== ==Thin sample process SMALLEY (10/21/2016)== ==================== 10mW @ **24%** for 1um patterns 58deg Al etch, not water before (new etches 600nm in 35sec and 200nm in 13sec) 5a/sec al deposition hardbaked 30min at 150deg ==================== ==whole wafer process SMALLEY (10/21/2016)== ==================== 10mW @ **50%** for everything else Al etch in water bath at 60deg (120 hotplate) exit bath
