photolithography

Photolithography Recipes

az2020 Photoresist on Lithium Niobate

  • Spin 20-25 drops @ 3000rpm for 1min
  • Soft bake in the oven in a glass dish @ 100C for 15 min
  • Expose on North aligner for 10 sec
  • Develop for ~30 sec
  • Hard bake for 15 min in oven in a glass dish @ 100C

az2020 Photoresist Bake Time for Lithium Niobate

Positive Photoresist

  • Spin HMDS @ 3000 rpm, 1min
  • Spin AZ3330
  • Bake at 110C for 1m30s (120C works fine)
  • Expose on south aligner for 11 sec, hard contact
  • Develop for ~40 sec
  • Hard bake for 1 min

Negative Photoresist

  • Spin HMDS @ 3000 rpm, 1min
  • Spin AZ2020
  • Bake at 110C for 1 min
  • Expose on south aligner for 25 sec, hard contact
  • Hard bake for 1 min
  • Develop for ~90 sec

SU8-10 Recipe spin 500rpm @ 100rpm/s 6s, 4400rpm @ 1200rpm/s 60s, 6000rpm @ 6000rpm/s 2s; or just whatever program is on the spinner

Soft bake, 65C 10min → 95C 10min → 65C

Exp 30s on filtered aligner;

Hard bake, 65C 6min → 95C 6min → 65C, Dev ~45s

RT → 200C, 200C 10min → 65C

RT→250C, 250C 5min → 65C


NR8 Resist

Get a clean silicon wafer. Spin HMDS Spin NR8 at 3krpm bake at 100C in the oven in a glass dish for 7minutes

below is the characterization of the photoresist NR8. Going from right to left of the 4 different areas we have 10 sec exposure, 20 sec, 30 sec, 40 sec.

for lithium niobate, process is simular, except i baked it for 15 min and i did 6 different areas. going from left to right we have 60 sec, 50, 40, etc to 10 seconds. (click for better view)

Negative Resist

use az2020, ~20-30 drops, 3000 rpm for 1 min, bake at 110 for 1 min. Expose mask for ~7-10 sec. Bake for another minute. Develop for 1 min. Check under microscope before cleaning off photoresist or etching metal.

Bake times vary in the oven.


Device Prep

Adding Resist

  1. Spin LOR 3A onto Wafer (Really douse the thing) @ 2000 RPM for 1 min
  2. Bake 150 degrees for 15 min
  3. Spin PMMA onto Wafer @ 3000 RPM for 1 min
  4. Bake 150 degrees for 15 min
  5. Spin VERY SMALL AMOUNT of Aquasafe onto wafer (ONLY IF LiNbO3) @ 1000 RPM for 1 min

NOTE: for spinner, use program S. you can rewrite that. Also, make sure nobody turns off the vacuum. (if anybody to your left is reaching awkwardly behind the wafer development bench, stop them).

Development

  1. Rinse off Aquasafe with Water [use spray] (ONLY IF LiNbO3) and Air spray dry
  2. Dip sample into 1:2 MIBK:IPA for 2 minutes (hold and move back and forth gently)
    1. At 2 minutes, begin to rinse with IPA
  3. Dry using Air Spray
    1. (LOR only) Dip sample into MIF 300 for 4 seconds
  4. At 4 seconds, begin to rinse in water
  5. Air Spray dry

Liftoff

  1. Put samples into NMP bath
  2. Place large water dish on hot plate at 90 degrees
  3. Insert buffer (Piece of plastic)
  4. Put NMP container with sample onto plastic buffer
  5. Cover and let sit until Al liftoff is complete (Overnight)
  6. Remove sample from NMP (shoot with pipette water gun to clean off large chunks)
    1. While still wet, insert into Acetone bath
  7. Sonicate for 10 seconds
    1. Or brush with a cleanroom swab
  8. Rinse in IPA
  9. Air Spray dry
photolithography.txt · Last modified: 2015/07/08 15:25 by toph1990